2SA1179 -0.15a , -55v pnp silicon plastic encapsulated transistor elektronische bauelemente 28-jan-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ?? ? base ? emitte r collector ? ? features ? high breakdown voltage marking package information package mpq leadersize sot-23 3k 7? inch absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol ratings unit collector to base voltage v cbo -55 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5 v collector current - continuous i c -150 ma collector power dissipation p c 200 mw junction and storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v ( br ) cbo -55 - - v i c = -10 ? a, i e =0 collecto r to emitter breakdown v (br)ceo -50 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -10 ? a, i c =0 collector cut-off current i cbo - - -0.1 ? a v cb = -35v, i e =0 emitter cut-off current i ebo - - -0.1 ? a ? v eb = -4v, i c =0 dc current gain h fe 200 - 400 v ce = -6v, i c = -1ma collector to emitter saturation voltage v ce(sat) - - -0.5 v i c = -50ma, i b = -5ma base to emitter saturation voltage v be(sat) - - -1.0 v i c = -50ma, i b = -5ma transition frequency f t - 180 - mhz v ce = -6v, i c = -10ma collector output capacitance c ob - 4 - pf v cb = -6v, i e =0, f=1mhz product marking code 2SA1179 m rohs compliant product a suffix of ?-c? specifies halogen & lead-free sot-23 ref. millimete r ref. millimete r min. max. min. max. a 2.80 3.00 g 0.10 ref. b 2.25 2.55 h 0.55 ref. c 1.20 1.40 j 0.08 0.15 d 0.90 1.15 k 0.5 ref. e 1.80 2.00 l 0.95 typ. f 0.30 0.50
2SA1179 -0.15a , -55v pnp silicon plastic encapsulated transistor elektronische bauelemente 28-jan-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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